2SK3666-3-TB-E
ON Semiconductor
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionJFET N-CH 10MA 200MW 3CP
- CategoryTransistors - JFETs
- Datasheet 2SK3666-3-TB-E Datasheet
-
ECAD Model
- Share
In Stock: 12,686
Can ship immediately
Pricing:
- 1$0.47
- 3,000$0.09037
- 6,000$0.08134
- 15,000$0.0723
- 30,000$0.06778
- 75,000$0.06009
- 150,000$0.05784
Quote It
Technical Details
- Series:-
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N-Channel
- Voltage - Breakdown (V(BR)GSS):-
- Drain to Source Voltage (Vdss):30 V
- Current - Drain (Idss) @ Vds (Vgs=0):1.2 mA @ 10 V
- Current Drain (Id) - Max:10 mA
- Voltage - Cutoff (VGS off) @ Id:180 mV @ 1 µA
- Input Capacitance (Ciss) (Max) @ Vds:4pF @ 10V
- Resistance - RDS(On):200 Ohms
- Power - Max:200 mW
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-236-3, SC-59, SOT-23-3
- Supplier Device Package:3-CP
