2SK879-Y(TE85L,F)
Toshiba Electronic Devices and Storage Corporation
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionJFET N-CH 0.1W USM
- CategoryTransistors - JFETs
- Datasheet 2SK879-Y(TE85L,F) Datasheet
-
ECAD Model
- Share
In Stock: 605
Can ship immediately
Pricing:
- 1$0.44
- 3,000$0.14777
- 6,000$0.13823
- 15,000$0.13347
Quote It
Technical Details
- Series:-
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N-Channel
- Voltage - Breakdown (V(BR)GSS):-
- Drain to Source Voltage (Vdss):-
- Current - Drain (Idss) @ Vds (Vgs=0):1.2 mA @ 10 V
- Current Drain (Id) - Max:-
- Voltage - Cutoff (VGS off) @ Id:400 mV @ 100 nA
- Input Capacitance (Ciss) (Max) @ Vds:8.2pF @ 10V
- Resistance - RDS(On):-
- Power - Max:100 mW
- Operating Temperature:125°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:SC-70, SOT-323
- Supplier Device Package:USM
Related Products
JFET N-CH 35V 0.3W 4SMD
- 1: $137.89000
- 10: $128.87858
