NJX1675PDR2G
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionPOWER BIPOLAR TRANSISTOR, PNP
- CategoryTransistors - Bipolar (BJT) - Arrays
- Datasheet NJX1675PDR2G Datasheet
-
ECAD Model
- Share
In Stock: 240,101
Can ship immediately
Pricing:
- 1$0.2
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Technical Details
- Series:-
- Package:Bulk
- Part Status:Obsolete
- Transistor Type:NPN, PNP
- Current - Collector (Ic) (Max):3A
- Voltage - Collector Emitter Breakdown (Max):30V
- Vce Saturation (Max) @ Ib, Ic:115mV @ 200mA, 2A, 170mV @ 200mA, 2A
- Current - Collector Cutoff (Max):100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:180 @ 1A, 2V
- Power - Max:2W
- Frequency - Transition:100MHz, 120MHz
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package:8-SOIC
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