HN1B04FE-GR,LF
Toshiba Electronic Devices and Storage Corporation
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionTRANS NPN/PNP 50V 0.15A ES6
- CategoryTransistors - Bipolar (BJT) - Arrays
- Datasheet HN1B04FE-GR,LF Datasheet
-
ECAD Model
- Share
In Stock: 1,982
Can ship immediately
Pricing:
- 1$0.31
- 4,000$0.05313
- 8,000$0.0462
- 12,000$0.03927
- 28,000$0.03696
- 100,000$0.0308
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Technical Details
- Series:-
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- Transistor Type:NPN, PNP
- Current - Collector (Ic) (Max):150mA
- Voltage - Collector Emitter Breakdown (Max):50V
- Vce Saturation (Max) @ Ib, Ic:250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max):100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 6V
- Power - Max:100mW
- Frequency - Transition:80MHz
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:SOT-563, SOT-666
- Supplier Device Package:ES6
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