HN4C51J(TE85L,F)
Toshiba Electronic Devices and Storage Corporation
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionTRANS 2NPN 120V 0.1A SMV
- CategoryTransistors - Bipolar (BJT) - Arrays
- Datasheet HN4C51J(TE85L,F) Datasheet
-
ECAD Model
- Share
In Stock: 758
Can ship immediately
Pricing:
- 1$0.46
- 3,000$0.12994
- 6,000$0.12206
- 15,000$0.11419
- 30,000$0.105
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Technical Details
- Series:-
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- Transistor Type:2 NPN (Dual) Common Base
- Current - Collector (Ic) (Max):100mA
- Voltage - Collector Emitter Breakdown (Max):120V
- Vce Saturation (Max) @ Ib, Ic:300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max):100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 6V
- Power - Max:300mW
- Frequency - Transition:100MHz
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:SC-74A, SOT-753
- Supplier Device Package:SMV
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