HN3C51F-GR(TE85L,F
Toshiba Electronic Devices and Storage Corporation
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionTRANS 2NPN 120V 0.1A SM6
- CategoryTransistors - Bipolar (BJT) - Arrays
- Datasheet HN3C51F-GR(TE85L,F Datasheet
-
ECAD Model
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In Stock: 147
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Technical Details
- Series:-
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Obsolete
- Transistor Type:2 NPN (Dual)
- Current - Collector (Ic) (Max):100mA
- Voltage - Collector Emitter Breakdown (Max):120V
- Vce Saturation (Max) @ Ib, Ic:300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max):100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 6V
- Power - Max:300mW
- Frequency - Transition:100MHz
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:SC-74, SOT-457
- Supplier Device Package:SM6
