HN1B01FU-Y(L,F,T)
Toshiba Electronic Devices and Storage Corporation
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionTRANS NPN/PNP 50V 0.15A US6
- CategoryTransistors - Bipolar (BJT) - Arrays
- Datasheet HN1B01FU-Y(L,F,T) Datasheet
-
ECAD Model
- Share
In Stock: 136
Can ship immediately
Pricing:
- 1$0.33
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Technical Details
- Series:-
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- Transistor Type:NPN, PNP
- Current - Collector (Ic) (Max):150mA
- Voltage - Collector Emitter Breakdown (Max):50V
- Vce Saturation (Max) @ Ib, Ic:300mV @ 10mA, 100mA
- Current - Collector Cutoff (Max):100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 2mA, 6V
- Power - Max:200mW
- Frequency - Transition:120MHz
- Operating Temperature:125°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:6-TSSOP, SC-88, SOT-363
- Supplier Device Package:US6
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