MT3S111P(TE12L,F)
Toshiba Electronic Devices and Storage Corporation
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionRF TRANS NPN 6V 8GHZ PW-MINI
- CategoryTransistors - Bipolar (BJT) - RF
- Datasheet MT3S111P(TE12L,F) Datasheet
-
ECAD Model
- Share
In Stock: 8,029
Can ship immediately
Pricing:
- 1$0.89
- 1,000$0.3825
- 2,000$0.357
- 5,000$0.33915
- 10,000$0.32513
- 25,000$0.3162
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Technical Details
- Series:-
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- Transistor Type:NPN
- Voltage - Collector Emitter Breakdown (Max):6V
- Frequency - Transition:8GHz
- Noise Figure (dB Typ @ f):1.25dB @ 1GHz
- Gain:10.5dB
- Power - Max:1W
- DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 30mA, 5V
- Current - Collector (Ic) (Max):100mA
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-243AA
- Supplier Device Package:PW-MINI
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