MT3S111TU,LF
Toshiba Electronic Devices and Storage Corporation
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionRF SIGE NPN BIPOLAR TRANSISTOR N
- CategoryTransistors - Bipolar (BJT) - RF
-
ECAD Model
- Share
In Stock: 3,503
Can ship immediately
Pricing:
- 1$0.58
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Technical Details
- Series:-
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- Transistor Type:NPN
- Voltage - Collector Emitter Breakdown (Max):6V
- Frequency - Transition:10GHz
- Noise Figure (dB Typ @ f):0.6dB ~ 0.85dB @ 500MHz ~ 1GHz
- Gain:12.5dB
- Power - Max:800mW
- DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 30mA, 5V
- Current - Collector (Ic) (Max):100mA
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:3-SMD, Flat Lead
- Supplier Device Package:UFM
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