NESG2107M33-A
CEL (California Eastern Laboratories)
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionRF TRANS NPN 5V 10GHZ 3SMINMOLD
- CategoryTransistors - Bipolar (BJT) - RF
- Datasheet NESG2107M33-A Datasheet
-
ECAD Model
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In Stock: 110
Can ship immediately
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Technical Details
- Series:-
- Package:Bulk
- Part Status:Obsolete
- Transistor Type:NPN
- Voltage - Collector Emitter Breakdown (Max):5V
- Frequency - Transition:10GHz
- Noise Figure (dB Typ @ f):0.9dB ~ 1.5dB @ 2GHz
- Gain:7dB ~ 10dB
- Power - Max:130mW
- DC Current Gain (hFE) (Min) @ Ic, Vce:140 @ 5mA, 1V
- Current - Collector (Ic) (Max):100mA
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:3-SMD, Flat Lead
- Supplier Device Package:3-SuperMiniMold (M33)
