MDS1100

Microsemi
In Stock: 113

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Technical Details

  • Series:-
  • Package:Bulk
  • Part Status:Obsolete
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):65V
  • Frequency - Transition:1.03GHz
  • Noise Figure (dB Typ @ f):-
  • Gain:8.9dB

 

  • Power - Max:8750W
  • DC Current Gain (hFE) (Min) @ Ic, Vce:20 @ 5A, 5V
  • Current - Collector (Ic) (Max):100A
  • Operating Temperature:200°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:55TU-1
  • Supplier Device Package:55TU-1

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