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Technical Details

  • Series:-
  • Package:Strip
  • Part Status:Obsolete
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):10V
  • Frequency - Transition:9GHz
  • Noise Figure (dB Typ @ f):1.2dB @ 1GHz
  • Gain:17dB ~ 23dB

 

  • Power - Max:200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 20mA, 8V
  • Current - Collector (Ic) (Max):65mA
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-253-4, TO-253AA
  • Supplier Device Package:-

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