MRF5812G

Technical Details

• Series:-
• Package:Bulk
• Part Status:Obsolete
• Transistor Type:NPN
• Voltage - Collector Emitter Breakdown (Max):15V
• Frequency - Transition:5GHz
• Noise Figure (dB Typ @ f):2dB ~ 3dB @ 500MHz
• Gain:13dB ~ 15.5dB

• Power - Max:1.25W
• DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 50mA, 5V
• Current - Collector (Ic) (Max):200mA
• Operating Temperature:-
• Mounting Type:Surface Mount
• Package / Case:8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package:8-SO