NSVMUN5212DW1T1G
ON Semiconductor
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionTRANS 2NPN PREBIAS 0.25W SOT363
- CategoryTransistors - Bipolar (BJT) - Arrays, Pre-Biased
- Datasheet NSVMUN5212DW1T1G Datasheet
-
ECAD Model
- Share
In Stock: 26,853
Can ship immediately
Pricing:
- 1$0.41
- 3,000$0.0749
- 6,000$0.06548
- 15,000$0.05606
- 30,000$0.05292
- 75,000$0.04978
- 150,000$0.04455
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Technical Details
- Series:-
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- Transistor Type:2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max):100mA
- Voltage - Collector Emitter Breakdown (Max):50V
- Resistor - Base (R1):22kOhms
- Resistor - Emitter Base (R2):22kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max):500nA
- Frequency - Transition:-
- Power - Max:250mW
- Mounting Type:Surface Mount
- Package / Case:6-TSSOP, SC-88, SOT-363
- Supplier Device Package:SC-88/SC70-6/SOT-363
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