NSVB123JPDXV6T1G
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionSMALL SIGNAL BIPOLAR TRANSISTOR
- CategoryTransistors - Bipolar (BJT) - Arrays, Pre-Biased
- Datasheet NSVB123JPDXV6T1G Datasheet
-
ECAD Model
- Share
In Stock: 52,189
Can ship immediately
Pricing:
- 1$0.08
- 8,000$0.08
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Technical Details
- Series:-
- Package:Bulk
- Part Status:Obsolete
- Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max):100mA
- Voltage - Collector Emitter Breakdown (Max):50V
- Resistor - Base (R1):2.2kOhms
- Resistor - Emitter Base (R2):4.7kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max):500nA
- Frequency - Transition:-
- Power - Max:500mW
- Mounting Type:Surface Mount
- Package / Case:SOT-563, SOT-666
- Supplier Device Package:SOT-563
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