RN1966FE(TE85L,F)
Toshiba Electronic Devices and Storage Corporation
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionTRANS 2NPN PREBIAS 0.1W ES6
- CategoryTransistors - Bipolar (BJT) - Arrays, Pre-Biased
- Datasheet RN1966FE(TE85L,F) Datasheet
-
ECAD Model
- Share
In Stock: 4,142
Can ship immediately
Pricing:
- 1$0.38
- 4,000$0.05298
Quote It
Technical Details
- Series:-
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Obsolete
- Transistor Type:2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max):100mA
- Voltage - Collector Emitter Breakdown (Max):50V
- Resistor - Base (R1):4.7kOhms
- Resistor - Emitter Base (R2):47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max):100nA (ICBO)
- Frequency - Transition:250MHz
- Power - Max:100mW
- Mounting Type:Surface Mount
- Package / Case:SOT-563, SOT-666
- Supplier Device Package:ES6
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