RN2606(TE85L,F)
Toshiba Electronic Devices and Storage Corporation
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionTRANS 2PNP PREBIAS 0.3W SM6
- CategoryTransistors - Bipolar (BJT) - Arrays, Pre-Biased
- Datasheet RN2606(TE85L,F) Datasheet
-
ECAD Model
- Share
In Stock: 1,181
Can ship immediately
Pricing:
- 1$0.48
- 3,000$0.0882
- 6,000$0.07938
- 15,000$0.07056
- 30,000$0.06615
- 75,000$0.0588
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Technical Details
- Series:-
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- Transistor Type:2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max):100mA
- Voltage - Collector Emitter Breakdown (Max):50V
- Resistor - Base (R1):4.7kOhms
- Resistor - Emitter Base (R2):47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max):100nA (ICBO)
- Frequency - Transition:200MHz
- Power - Max:300mW
- Mounting Type:Surface Mount
- Package / Case:SC-74, SOT-457
- Supplier Device Package:SM6
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