NSVMUN5133DW1T1G
ON Semiconductor
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionTRANS 2PNP BRT BIPO SOT363-6
- CategoryTransistors - Bipolar (BJT) - Arrays, Pre-Biased
- Datasheet NSVMUN5133DW1T1G Datasheet
-
ECAD Model
- Share
In Stock: 51,127
Can ship immediately
Pricing:
- 1$0.11771
- 3,000$0.11169
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Technical Details
- Series:Automotive, AEC-Q101
- Package:Tape & Reel (TR)
- Part Status:Active
- Transistor Type:2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max):100mA
- Voltage - Collector Emitter Breakdown (Max):50V
- Resistor - Base (R1):4.7kOhms
- Resistor - Emitter Base (R2):47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max):500nA
- Frequency - Transition:-
- Power - Max:250mW
- Mounting Type:Surface Mount
- Package / Case:6-TSSOP, SC-88, SOT-363
- Supplier Device Package:SC-88/SC70-6/SOT-363
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