PBLS1502V,115
NXP Semiconductors
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionTRANS NPN PREBIAS/PNP SOT666
- CategoryTransistors - Bipolar (BJT) - Arrays, Pre-Biased
- Datasheet PBLS1502V,115 Datasheet
-
ECAD Model
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In Stock: 165
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Technical Details
- Series:-
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Obsolete
- Transistor Type:1 NPN Pre-Biased, 1 PNP
- Current - Collector (Ic) (Max):100mA, 500mA
- Voltage - Collector Emitter Breakdown (Max):50V, 15V
- Resistor - Base (R1):4.7kOhms
- Resistor - Emitter Base (R2):4.7kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 10mA, 5V / 150 @ 100mA, 2V
- Vce Saturation (Max) @ Ib, Ic:150mV @ 500µA, 10mA / 250mV @ 50mA, 500mA
- Current - Collector Cutoff (Max):1µA, 100nA
- Frequency - Transition:280MHz
- Power - Max:300mW
- Mounting Type:Surface Mount
- Package / Case:SOT-563, SOT-666
- Supplier Device Package:SOT-666
