NSVB114YPDXV6T1G
ON Semiconductor
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionTRANS BRT 50V 100MA SOT563
- CategoryTransistors - Bipolar (BJT) - Arrays, Pre-Biased
- Datasheet NSVB114YPDXV6T1G Datasheet
-
ECAD Model
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In Stock: 161
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Technical Details
- Series:-
- Package:Tape & Reel (TR)
- Part Status:Obsolete
- Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max):100mA
- Voltage - Collector Emitter Breakdown (Max):50V
- Resistor - Base (R1):10kOhms
- Resistor - Emitter Base (R2):47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max):500nA
- Frequency - Transition:-
- Power - Max:500mW
- Mounting Type:Surface Mount
- Package / Case:SOT-563, SOT-666
- Supplier Device Package:SOT-563
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