F475R07W2H3B51BOMA1
Rochester Electronics- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionIGBT, 75A, 650V, N-CHANNEL
- CategoryTransistors - IGBTs - Modules
- Datasheet F475R07W2H3B51BOMA1 Datasheet
-
ECAD Model
- Share
In Stock: 369
Can ship immediately
Pricing:
- 1$42.96
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Technical Details
- Series:-
- Package:Tray
- Part Status:Obsolete
- IGBT Type:-
- Configuration:Full Bridge Inverter
- Voltage - Collector Emitter Breakdown (Max):650 V
- Current - Collector (Ic) (Max):75 A
- Power - Max:520 W
- Vce(on) (Max) @ Vge, Ic:1.55V @ 15V, 37.5A
- Current - Collector Cutoff (Max):1 mA
- Input Capacitance (Cies) @ Vce:4.7 nF @ 25 V
- Input:Standard
- NTC Thermistor:Yes
- Operating Temperature:-40°C ~ 150°C (TJ)
- Mounting Type:Chassis Mount
- Package / Case:Module
- Supplier Device Package:Module
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