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Discrete Semiconductor Products
Transistors - IGBTs - Modules
FF200R17KE3HOSA1
FF200R17KE3HOSA1
IR (Infineon Technologies)
Gallery image caption
Lifecycle status
Active
RoHS
RoHS Compliant
Description
IGBT MOD 1700V 310A 1250W
Category
Transistors - IGBTs - Modules
Datasheet
FF200R17KE3HOSA1 Datasheet
ECAD Model
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In Stock:
235
Can ship immediately
Pricing:
1
$157.31
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Technical Details
Series:
C
Package:
Bulk
Part Status:
Active
IGBT Type:
Trench Field Stop
Configuration:
Half Bridge
Voltage - Collector Emitter Breakdown (Max):
1700 V
Current - Collector (Ic) (Max):
310 A
Power - Max:
1250 W
Vce(on) (Max) @ Vge, Ic:
2.45V @ 15V, 200A
Current - Collector Cutoff (Max):
3 mA
Input Capacitance (Cies) @ Vce:
18 nF @ 25 V
Input:
Standard
NTC Thermistor:
No
Operating Temperature:
-40°C ~ 125°C (TJ)
Mounting Type:
Chassis Mount
Package / Case:
Module
Supplier Device Package:
Module
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