DF200R12W1H3B27BOMA1
IR (Infineon Technologies)
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionIGBT MOD 1200V 30A 375W
- CategoryTransistors - IGBTs - Modules
- Datasheet DF200R12W1H3B27BOMA1 Datasheet
-
ECAD Model
- Share
In Stock: 133
Can ship immediately
Pricing:
- 1$54.6175
- 24$54.6175
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Technical Details
- Series:-
- Package:Bulk
- Part Status:Active
- IGBT Type:-
- Configuration:2 Independent
- Voltage - Collector Emitter Breakdown (Max):1200 V
- Current - Collector (Ic) (Max):30 A
- Power - Max:375 W
- Vce(on) (Max) @ Vge, Ic:1.3V @ 15V, 30A
- Current - Collector Cutoff (Max):1 mA
- Input Capacitance (Cies) @ Vce:2 nF @ 25 V
- Input:Standard
- NTC Thermistor:Yes
- Operating Temperature:-40°C ~ 150°C
- Mounting Type:Chassis Mount
- Package / Case:Module
- Supplier Device Package:Module
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