BSM75GB120DN2HOSA1

Technical Details

• Series:-
• Package:Tray
• Part Status:Last Time Buy
• IGBT Type:-
• Configuration:Half Bridge
• Voltage - Collector Emitter Breakdown (Max):1200 V
• Current - Collector (Ic) (Max):105 A
• Power - Max:625 W
• Vce(on) (Max) @ Vge, Ic:3V @ 15V, 75A

• Current - Collector Cutoff (Max):1.5 mA
• Input Capacitance (Cies) @ Vce:5.5 nF @ 25 V
• Input:Standard
• NTC Thermistor:No
• Operating Temperature:150°C (TJ)
• Mounting Type:Chassis Mount
• Package / Case:Module
• Supplier Device Package:Module