FF200R12KE3B2HOSA1

Technical Details

• Series:-
• Package:Tray
• Part Status:Active
• IGBT Type:-
• Configuration:Half Bridge
• Voltage - Collector Emitter Breakdown (Max):1200 V
• Current - Collector (Ic) (Max):295 A
• Power - Max:1050 W
• Vce(on) (Max) @ Vge, Ic:2.15V @ 15V, 200A

• Current - Collector Cutoff (Max):5 mA
• Input Capacitance (Cies) @ Vce:14 nF @ 25 V
• Input:Standard
• NTC Thermistor:No
• Operating Temperature:-40°C ~ 125°C
• Mounting Type:Chassis Mount
• Package / Case:Module
• Supplier Device Package:Module