FF650R17IE4DB2BOSA1

Technical Details

• Series:-
• Package:Bulk
• Part Status:Active
• IGBT Type:-
• Configuration:2 Independent
• Voltage - Collector Emitter Breakdown (Max):1700 V
• Current - Collector (Ic) (Max):-
• Power - Max:4150 W
• Vce(on) (Max) @ Vge, Ic:2.45V @ 15V, 650A

• Current - Collector Cutoff (Max):5 mA
• Input Capacitance (Cies) @ Vce:54 nF @ 25 V
• Input:Standard
• NTC Thermistor:Yes
• Operating Temperature:-40°C ~ 150°C
• Mounting Type:Chassis Mount
• Package / Case:Module
• Supplier Device Package:Module