APTGT75A170D1G

Microsemi
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Technical Details

  • Series:-
  • Package:Bulk
  • Part Status:Obsolete
  • IGBT Type:Trench Field Stop
  • Configuration:Half Bridge
  • Voltage - Collector Emitter Breakdown (Max):1700 V
  • Current - Collector (Ic) (Max):120 A
  • Power - Max:520 W
  • Vce(on) (Max) @ Vge, Ic:2.4V @ 15V, 75A

 

  • Current - Collector Cutoff (Max):5 mA
  • Input Capacitance (Cies) @ Vce:6.5 nF @ 25 V
  • Input:Standard
  • NTC Thermistor:No
  • Operating Temperature:-
  • Mounting Type:Chassis Mount
  • Package / Case:D1
  • Supplier Device Package:D1

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