APTGF50DH60T1G

Microchip Technology
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Technical Details

  • Series:-
  • Package:Bulk
  • Part Status:Obsolete
  • IGBT Type:NPT
  • Configuration:Asymmetrical Bridge
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):65 A
  • Power - Max:250 W
  • Vce(on) (Max) @ Vge, Ic:2.45V @ 15V, 50A

 

  • Current - Collector Cutoff (Max):250 µA
  • Input Capacitance (Cies) @ Vce:2.2 nF @ 25 V
  • Input:Standard
  • NTC Thermistor:Yes
  • Operating Temperature:-
  • Mounting Type:Chassis Mount
  • Package / Case:SP1
  • Supplier Device Package:SP1

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