VS-GB100TP120N
Vishay General Semiconductor – Diodes Division- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionIGBT MOD 1200V 200A INT-A-PAK
- CategoryTransistors - IGBTs - Modules
- Datasheet VS-GB100TP120N Datasheet
-
ECAD Model
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In Stock: 114
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Technical Details
- Series:-
- Package:Bulk
- Part Status:Obsolete
- IGBT Type:-
- Configuration:Half Bridge
- Voltage - Collector Emitter Breakdown (Max):1200 V
- Current - Collector (Ic) (Max):200 A
- Power - Max:650 W
- Vce(on) (Max) @ Vge, Ic:2.2V @ 15V, 100A
- Current - Collector Cutoff (Max):5 mA
- Input Capacitance (Cies) @ Vce:7.43 nF @ 25 V
- Input:Standard
- NTC Thermistor:No
- Operating Temperature:150°C (TJ)
- Mounting Type:Chassis Mount
- Package / Case:INT-A-Pak
- Supplier Device Package:INT-A-PAK
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IGBT MOD 1200V 150A INT-A-PAK
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