RN1413(TE85L,F)
Toshiba Electronic Devices and Storage Corporation
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionTRANS PREBIAS NPN 50V 0.1A SMINI
- CategoryTransistors - Bipolar (BJT) - Single, Pre-Biased
- Datasheet RN1413(TE85L,F) Datasheet
-
ECAD Model
- Share
In Stock: 5,790
Can ship immediately
Pricing:
- 1$0.31
- 3,000$0.02945
- 6,000$0.02657
- 15,000$0.0231
- 30,000$0.02079
- 75,000$0.01848
- 150,000$0.0154
Quote It
Technical Details
- Series:-
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- Transistor Type:NPN - Pre-Biased
- Current - Collector (Ic) (Max):100 mA
- Voltage - Collector Emitter Breakdown (Max):50 V
- Resistor - Base (R1):47 kOhms
- Resistor - Emitter Base (R2):-
- DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max):100nA (ICBO)
- Frequency - Transition:250 MHz
- Power - Max:200 mW
- Mounting Type:Surface Mount
- Package / Case:TO-236-3, SC-59, SOT-23-3
- Supplier Device Package:S-Mini
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