FJN3310RTA

Technical Details

• Series:-
• Package:Bulk
• Part Status:Obsolete
• Transistor Type:NPN - Pre-Biased
• Current - Collector (Ic) (Max):100 mA
• Voltage - Collector Emitter Breakdown (Max):40 V
• Resistor - Base (R1):10 kOhms
• Resistor - Emitter Base (R2):-

• DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 1mA, 5V
• Vce Saturation (Max) @ Ib, Ic:300mV @ 1mA, 10mA
• Current - Collector Cutoff (Max):100nA (ICBO)
• Frequency - Transition:250 MHz
• Power - Max:300 mW
• Mounting Type:Through Hole
• Package / Case:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
• Supplier Device Package:TO-92-3