FJV4110RMTF

Technical Details

• Series:-
• Package:Bulk
• Part Status:Obsolete
• Transistor Type:PNP - Pre-Biased
• Current - Collector (Ic) (Max):100 mA
• Voltage - Collector Emitter Breakdown (Max):40 V
• Resistor - Base (R1):10 kOhms
• Resistor - Emitter Base (R2):-

• DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 1mA, 5V
• Vce Saturation (Max) @ Ib, Ic:300mV @ 1mA, 10mA
• Current - Collector Cutoff (Max):100nA (ICBO)
• Frequency - Transition:200 MHz
• Power - Max:200 mW
• Mounting Type:Surface Mount
• Package / Case:TO-236-3, SC-59, SOT-23-3
• Supplier Device Package:SOT-23-3 (TO-236)