RN1115MFV,L3F
Toshiba Electronic Devices and Storage Corporation
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionTRANS PREBIAS NPN 50V 0.1A VESM
- CategoryTransistors - Bipolar (BJT) - Single, Pre-Biased
- Datasheet RN1115MFV,L3F Datasheet
-
ECAD Model
- Share
In Stock: 16,200
Can ship immediately
Pricing:
- 1$0.02682
- 8,000$0.02682
- 16,000$0.02331
Quote It
Technical Details
- Series:-
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Not For New Designs
- Transistor Type:NPN - Pre-Biased
- Current - Collector (Ic) (Max):100 mA
- Voltage - Collector Emitter Breakdown (Max):50 V
- Resistor - Base (R1):2.2 kOhms
- Resistor - Emitter Base (R2):10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max):500nA
- Frequency - Transition:250 MHz
- Power - Max:150 mW
- Mounting Type:Surface Mount
- Package / Case:SOT-723
- Supplier Device Package:VESM
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