PDTC115EMB,315

Technical Details

• Series:-
• Package:Bulk
• Part Status:Active
• Transistor Type:NPN - Pre-Biased
• Current - Collector (Ic) (Max):20 mA
• Voltage - Collector Emitter Breakdown (Max):50 V
• Resistor - Base (R1):100 kOhms
• Resistor - Emitter Base (R2):100 kOhms

• DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic:150mV @ 250µA, 5mA
• Current - Collector Cutoff (Max):1µA
• Frequency - Transition:230 MHz
• Power - Max:250 mW
• Mounting Type:Surface Mount
• Package / Case:3-XFDFN
• Supplier Device Package:DFN1006B-3