NSBA114EF3T5G
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionSMALL SIGNAL BIPOLAR TRANSISTOR,
- CategoryTransistors - Bipolar (BJT) - Single, Pre-Biased
- Datasheet NSBA114EF3T5G Datasheet
-
ECAD Model
- Share
In Stock: 221,607
Can ship immediately
Pricing:
- 1$0.08
- 8,000$0.08
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Technical Details
- Series:-
- Package:Bulk
- Part Status:Active
- Transistor Type:PNP - Pre-Biased
- Current - Collector (Ic) (Max):100 mA
- Voltage - Collector Emitter Breakdown (Max):50 V
- Resistor - Base (R1):10 kOhms
- Resistor - Emitter Base (R2):10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce:35 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max):500nA
- Frequency - Transition:-
- Power - Max:254 mW
- Mounting Type:Surface Mount
- Package / Case:SOT-1123
- Supplier Device Package:SOT-1123
