NSB9435T1G

Technical Details

• Series:-
• Package:Bulk
• Part Status:Active
• Transistor Type:PNP - Pre-Biased
• Current - Collector (Ic) (Max):3 A
• Voltage - Collector Emitter Breakdown (Max):30 V
• Resistor - Base (R1):10 kOhms
• Resistor - Emitter Base (R2):-

• DC Current Gain (hFE) (Min) @ Ic, Vce:125 @ 800mA, 1V
• Vce Saturation (Max) @ Ib, Ic:550mV @ 300mA, 3A
• Current - Collector Cutoff (Max):-
• Frequency - Transition:110 MHz
• Power - Max:720 mW
• Mounting Type:Surface Mount
• Package / Case:TO-261-4, TO-261AA
• Supplier Device Package:SOT-223