RN1110MFV,L3F
Toshiba Electronic Devices and Storage Corporation
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionTRANS PREBIAS NPN 50V 0.1A VESM
- CategoryTransistors - Bipolar (BJT) - Single, Pre-Biased
- Datasheet RN1110MFV,L3F Datasheet
-
ECAD Model
- Share
In Stock: 183
Can ship immediately
Pricing:
- 1$0.02926
- 8,000$0.02926
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Technical Details
- Series:-
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- Transistor Type:NPN - Pre-Biased
- Current - Collector (Ic) (Max):100 mA
- Voltage - Collector Emitter Breakdown (Max):50 V
- Resistor - Base (R1):4.7 kOhms
- Resistor - Emitter Base (R2):-
- DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 5mA
- Current - Collector Cutoff (Max):100nA (ICBO)
- Frequency - Transition:-
- Power - Max:150 mW
- Mounting Type:Surface Mount
- Package / Case:SOT-723
- Supplier Device Package:VESM
