DTC114WSATP

ROHM Semiconductor
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Technical Details

  • Series:-
  • Package:Tape & Box (TB)
  • Part Status:Obsolete
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):10 kOhms
  • Resistor - Emitter Base (R2):4.7 kOhms

 

  • DC Current Gain (hFE) (Min) @ Ic, Vce:24 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:250 MHz
  • Power - Max:300 mW
  • Mounting Type:Through Hole
  • Package / Case:SC-72 Formed Leads
  • Supplier Device Package:SPT

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