FJV3109RMTF
ON Semiconductor
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionTRANS PREBIAS NPN 200MW SOT23-3
- CategoryTransistors - Bipolar (BJT) - Single, Pre-Biased
- Datasheet FJV3109RMTF Datasheet
-
ECAD Model
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In Stock: 131
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Technical Details
- Series:-
- Package:Tape & Reel (TR)
- Part Status:Obsolete
- Transistor Type:NPN - Pre-Biased
- Current - Collector (Ic) (Max):100 mA
- Voltage - Collector Emitter Breakdown (Max):40 V
- Resistor - Base (R1):4.7 kOhms
- Resistor - Emitter Base (R2):-
- DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic:300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max):100nA (ICBO)
- Frequency - Transition:250 MHz
- Power - Max:200 mW
- Mounting Type:Surface Mount
- Package / Case:TO-236-3, SC-59, SOT-23-3
- Supplier Device Package:SOT-23-3 (TO-236)
