RN1444ATE85LF
Toshiba Electronic Devices and Storage Corporation
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionTRANS PREBIAS NPN 20V 0.3A SMINI
- CategoryTransistors - Bipolar (BJT) - Single, Pre-Biased
- Datasheet RN1444ATE85LF Datasheet
-
ECAD Model
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In Stock: 107
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Technical Details
- Series:-
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Obsolete
- Transistor Type:NPN - Pre-Biased
- Current - Collector (Ic) (Max):300 mA
- Voltage - Collector Emitter Breakdown (Max):20 V
- Resistor - Base (R1):2.2 kOhms
- Resistor - Emitter Base (R2):-
- DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 4mA, 2V
- Vce Saturation (Max) @ Ib, Ic:100mV @ 3mA, 30mA
- Current - Collector Cutoff (Max):100nA (ICBO)
- Frequency - Transition:30 MHz
- Power - Max:200 mW
- Mounting Type:Surface Mount
- Package / Case:TO-236-3, SC-59, SOT-23-3
- Supplier Device Package:S-Mini
