RN1109MFV,L3F
Toshiba Electronic Devices and Storage Corporation
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionTRANS PREBIAS NPN 50V 0.1A VESM
- CategoryTransistors - Bipolar (BJT) - Single, Pre-Biased
- Datasheet RN1109MFV,L3F Datasheet
-
ECAD Model
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In Stock: 133
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Technical Details
- Series:-
- Package:Tape & Reel (TR)
- Part Status:Active
- Transistor Type:NPN - Pre-Biased
- Current - Collector (Ic) (Max):100 mA
- Voltage - Collector Emitter Breakdown (Max):50 V
- Resistor - Base (R1):47 kOhms
- Resistor - Emitter Base (R2):22 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 5mA
- Current - Collector Cutoff (Max):500nA
- Frequency - Transition:-
- Power - Max:150 mW
- Mounting Type:Surface Mount
- Package / Case:SOT-723
- Supplier Device Package:VESM
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