FA4F4M-T1B-A

Technical Details

• Series:-
• Package:Box
• Part Status:Obsolete
• Transistor Type:NPN - Pre-Biased
• Current - Collector (Ic) (Max):100 mA
• Voltage - Collector Emitter Breakdown (Max):50 V
• Resistor - Base (R1):22 Ohms
• Resistor - Emitter Base (R2):22 Ohms

• DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 50mA, 5V
• Vce Saturation (Max) @ Ib, Ic:200mV @ 250µ, 5mA
• Current - Collector Cutoff (Max):100nA (ICBO)
• Frequency - Transition:-
• Power - Max:200 mW
• Mounting Type:-
• Package / Case:-
• Supplier Device Package:-