PDTC114ES,126
NXP Semiconductors
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionTRANS PREBIAS NPN 500MW TO92-3
- CategoryTransistors - Bipolar (BJT) - Single, Pre-Biased
- Datasheet PDTC114ES,126 Datasheet
-
ECAD Model
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In Stock: 163
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Technical Details
- Series:-
- Package:Tape & Box (TB)
- Part Status:Obsolete
- Transistor Type:NPN - Pre-Biased
- Current - Collector (Ic) (Max):100 mA
- Voltage - Collector Emitter Breakdown (Max):50 V
- Resistor - Base (R1):10 kOhms
- Resistor - Emitter Base (R2):10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic:150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max):1µA
- Frequency - Transition:-
- Power - Max:500 mW
- Mounting Type:Through Hole
- Package / Case:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package:TO-92-3
