A2G35S200-01SR3
NXP Semiconductors
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionAIRFAST RF POWER GAN TRANSISTOR
- CategoryTransistors - FETs, MOSFETs - RF
- Datasheet A2G35S200-01SR3 Datasheet
-
ECAD Model
- Share
In Stock: 347
Can ship immediately
Pricing:
- 1$264.51
- 250$123.43584
Quote It
Technical Details
- Series:-
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- Transistor Type:GaN HEMT
- Frequency:3.4GHz ~ 3.6GHz
- Gain:16.1dB
- Voltage - Test:48 V
- Current Rating (Amps):-
- Noise Figure:-
- Current - Test:291 mA
- Power - Output:180W
- Voltage - Rated:125 V
- Package / Case:NI-400S-2S
- Supplier Device Package:NI-400S-2S
Related Products
GAN HEMT 50V 180W 2.7-3.1GHZ
- 1: $376.29000
GAN HEMT 50V 180W 2.7-3.1GHZ
- 1: $449.59000
