HGTD1N120BNS9A
ON Semiconductor
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionIGBT 1200V 5.3A 60W TO252AA
- CategoryTransistors - IGBTs - Single
- Datasheet HGTD1N120BNS9A Datasheet
-
ECAD Model
- Share
In Stock: 7,725
Can ship immediately
Pricing:
- 1$1.51
- 2,500$0.70122
- 5,000$0.66976
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Technical Details
- Series:-
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- IGBT Type:NPT
- Voltage - Collector Emitter Breakdown (Max):1200 V
- Current - Collector (Ic) (Max):5.3 A
- Current - Collector Pulsed (Icm):6 A
- Vce(on) (Max) @ Vge, Ic:2.9V @ 15V, 1A
- Power - Max:60 W
- Switching Energy:70µJ (on), 90µJ (off)
- Input Type:Standard
- Gate Charge:14 nC
- Td (on/off) @ 25°C:15ns/67ns
- Test Condition:960V, 1A, 82Ohm, 15V
- Reverse Recovery Time (trr):-
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package:TO-252AA
