STGW10M65DF2
STMicroelectronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionTRENCH GATE FIELD-STOP IGBT M SE
- CategoryTransistors - IGBTs - Single
- Datasheet STGW10M65DF2 Datasheet
-
ECAD Model
- Share
In Stock: 1,345
Can ship immediately
Pricing:
- 1$1.88
- 10$1.68796
- 100$1.35633
- 500$1.11435
- 1,200$0.92332
- 3,600$0.85965
- 6,000$0.84903
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Technical Details
- Series:M
- Package:Tube
- Part Status:Active
- IGBT Type:Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max):650 V
- Current - Collector (Ic) (Max):20 A
- Current - Collector Pulsed (Icm):40 A
- Vce(on) (Max) @ Vge, Ic:2V @ 15V, 10A
- Power - Max:115 W
- Switching Energy:120µJ (on), 270µJ (off)
- Input Type:Standard
- Gate Charge:28 nC
- Td (on/off) @ 25°C:19ns/91ns
- Test Condition:400V, 10A, 22Ohm, 15V
- Reverse Recovery Time (trr):96 ns
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-247-3
- Supplier Device Package:TO-247
