STGD6M65DF2
STMicroelectronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionTRENCH GATE FIELD-STOP IGBT, M S
- CategoryTransistors - IGBTs - Single
- Datasheet STGD6M65DF2 Datasheet
-
ECAD Model
- Share
In Stock: 1,595
Can ship immediately
Pricing:
- 1$1.14
- 2,500$0.49877
- 5,000$0.47774
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Technical Details
- Series:M
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- IGBT Type:Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max):650 V
- Current - Collector (Ic) (Max):12 A
- Current - Collector Pulsed (Icm):24 A
- Vce(on) (Max) @ Vge, Ic:2V @ 15V, 6A
- Power - Max:88 W
- Switching Energy:36µJ (on), 200µJ (off)
- Input Type:Standard
- Gate Charge:21.2 nC
- Td (on/off) @ 25°C:15ns/90ns
- Test Condition:400V, 6A, 22Ohm, 15V
- Reverse Recovery Time (trr):140 ns
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package:DPAK
