NGTB10N60R2DT4G
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionINSULATED GATE BIPOLAR TRANSISTO
- CategoryTransistors - IGBTs - Single
- Datasheet NGTB10N60R2DT4G Datasheet
-
ECAD Model
- Share
In Stock: 2,770
Can ship immediately
Pricing:
- 1$0.58
- 2,500$0.58
- 5,000$0.55238
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Technical Details
- Series:-
- Package:Bulk
- Part Status:Active
- IGBT Type:-
- Voltage - Collector Emitter Breakdown (Max):600 V
- Current - Collector (Ic) (Max):20 A
- Current - Collector Pulsed (Icm):40 A
- Vce(on) (Max) @ Vge, Ic:2.1V @ 15V, 10A
- Power - Max:72 W
- Switching Energy:412µJ (on), 140µJ (off)
- Input Type:Standard
- Gate Charge:53 nC
- Td (on/off) @ 25°C:48ns/120ns
- Test Condition:300V, 10A, 30Ohm, 15V
- Reverse Recovery Time (trr):90 ns
- Operating Temperature:175°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package:DPAK
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