NGTB30N135IHRWG
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionINSULATED GATE BIPOLAR TRANSISTO
- CategoryTransistors - IGBTs - Single
- Datasheet NGTB30N135IHRWG Datasheet
-
ECAD Model
- Share
In Stock: 65,112
Can ship immediately
Pricing:
- 1$2.7
- 30$2.30686
- 120$2.01054
- 510$1.72414
- 1,020$1.46735
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Technical Details
- Series:-
- Package:Bulk
- Part Status:Active
- IGBT Type:Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max):1.35 V
- Current - Collector (Ic) (Max):60 A
- Current - Collector Pulsed (Icm):120 A
- Vce(on) (Max) @ Vge, Ic:2.65V @ 15V, 30A
- Power - Max:394 W
- Switching Energy:850µJ (off)
- Input Type:Standard
- Gate Charge:234 nC
- Td (on/off) @ 25°C:-/250ns
- Test Condition:600V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr):-
- Operating Temperature:-40°C ~ 175°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-247-3
- Supplier Device Package:TO-247
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