NGTB50N65FL2WG
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionINSULATED GATE BIPOLAR TRANSISTO
- CategoryTransistors - IGBTs - Single
- Datasheet NGTB50N65FL2WG Datasheet
-
ECAD Model
- Share
In Stock: 1,392
Can ship immediately
Pricing:
- 1$3.43
- 90$3.43
Quote It
Technical Details
- Series:-
- Package:Bulk
- Part Status:Active
- IGBT Type:Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max):650 V
- Current - Collector (Ic) (Max):100 A
- Current - Collector Pulsed (Icm):200 A
- Vce(on) (Max) @ Vge, Ic:2V @ 15V, 50A
- Power - Max:417 W
- Switching Energy:1.5mJ (on), 460µJ (off)
- Input Type:Standard
- Gate Charge:220 nC
- Td (on/off) @ 25°C:100ns/237ns
- Test Condition:400V, 50A, 10Ohm, 15V
- Reverse Recovery Time (trr):94 ns
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-247-3
- Supplier Device Package:TO-247-3
Related Products
IRG8P75N65 - 650V 75A, IGBT
- 1: $3.50000
IKW75N60 - DISCRETE IGBT WITH AN
- 1: $3.90000
IKW25T120 - DISCRETE IGBT WITH A
- 1: $3.94000
IRG8P45N65 - 65V, 45A IGBT
- 1: $4.32000